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參數(shù)資料
| 型號(hào)： | MRF8HP21080HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大?。?/td> | 528K |
| 代理商： | MRF8HP21080HR3 |
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2
RF Device Data
Freescale Semiconductor
MRF8HP21080HR3 MRF8HP21080HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77°C, 16 W CW, 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc, 2170 MHz
Case Temperature 81°C, 80 W CW(3),28Vdc,IDQA = 150 mA, VGSB = 1.1 Vdc, 2170 MHz
RθJC
1.0
0.61
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
On Characteristics -- Side A (4)
Gate Threshold Voltage
(VDS =10 Vdc, ID = 100 μAdc)
VGS(th)
1.1
2.0
2.6
Gate Quiescent Voltage
(VDD =28 Vdc, IDA = 150 mA, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Drain--Source On--Voltage
(VGS =10 Vdc, ID =0.5 Adc)
VDS(on)
0.1
0.24
0.3
On Characteristics -- Side B (4)
Gate Threshold Voltage
(VDS =10 Vdc, ID =75 μAdc)
VGS(th)
1.2
2.0
2.7
Drain--Source On--Voltage
(VGS =10 Vdc, ID =0.7 Adc)
VDS(on)
0.1
0.24
0.3
Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 150 mA, VGSB =1.1 Vdc, Pout =16 W Avg.,
f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
13.8
14.4
16.8
Drain Efficiency
ηD
42.4
45.7
—
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
7.3
8.1
—
Adjacent Channel Power Ratio
ACPR
—
--33.6
--28.9
Input Return Loss
IRL
—
--17
--9
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Doherty configuration.
(continued)
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| MRF8HP21080HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21080HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21130HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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