參數(shù)資料
型號: MRF898
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CASE 333A-02, 6 PIN
文件頁數(shù): 1/4頁
文件大小: 276K
代理商: MRF898
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INFORMA
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MRF898
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common base amplifier applications in
industrial and commercial FM equipment operating in the range of
850–960 MHz.
Motorola Advanced Amplifier Concept Package
Specified 24 Volt, 900 MHz Characteristics
Output Power = 60 Watts
Power Gain = 7.0 dB Min
Efficiency = 60% Min
Double Input/Output Matched for Wideband Performance and Simplified
External Matching
Series Equivalent Large–Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
55
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
10
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
175
1.0
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
30
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
55
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
ICES
10
mAdc
(continued)
Order this document
by MRF898/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF898
60 W, 850–960 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 333A–02, STYLE 1
Motorola, Inc. 1994
REV 6
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參數(shù)描述
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