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參數(shù)資料
| 型號： | MRF858S |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 319A-02, 6 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 105K |
| 代理商： | MRF858S |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF858S
4
MOTOROLA RF DEVICE DATA
8.57E+05
MTBF
F
ACT
OR
(HOURS
x
AMPS
2 )
P
,OUTPUT
POWER
(W
ATTS)
out
G
pe
,POWER
GAIN
(dB)
G
pe
,POWER
GAIN
(dB)
830
910
f, FREQUENCY (MHz)
Figure 2. Performance in Broadband Circuit
TYPICAL CHARACTERISTICS
13.5
13
12.5
10.5
840
850
860
870
880
890
900
Gpe
4
3.5
3
2.5
2
1.5
1
VSWR
in
,INPUT
VSWR
VCC = 24 Vdc
IC = 500 mA
Pout = 3.6 W (CW)
7
6
5
0
Pin, INPUT POWER (WATTS)
Figure 3. Output Power & Power Gain versus
Input Power
4
3
2
0
0.1
0.2 0.3
Gpe
15
1
4
13
1
2
11
8
Pout
VCC = 24 Vdc
IC = 500 mA
f = 870 MHz
1
0.4
0.5
0.6
1
10
9
2000
0
VCE (Vdc)
Figure 4. DC SOA
0
Tj = 150°C
Tf = 50°C
1000
500
I C
(mAdc)
1100
0
VCE (Vdc)
Figure 5. DC SOA
(This device is MTBF limited for VCE < 20 Vdc.)
50
0
Tj = 175°C
Tf = 50°C
I C
(mAdc)
1000
900
800
700
600
1.00E+08
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. MTBF Factor versus
Junction Temperature
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
120
140
160
180
200
220
240
260
11.5
12
11
0.7 0.8
0.9
1500
2
4
6
8 10 12 14 16 18 20 22 24 26 28
2
4
6
8 1012 1416 1820 2224 26 28
1.72E+07
3.58E+06
2.34E+05
7.17E+04
2.43E+04
8.98E+03
3.59E+03
1.53E+03
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|---|---|
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