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參數(shù)資料
| 型號： | MRF7S38040HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465J-02, NI-400S-240, 3 PIN |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 512K |
| 代理商： | MRF7S38040HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S38040HR3 MRF7S38040HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
3400
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout = 8 Watts Avg.
24
12
16
20
11.5
15.5
55
16
14
12
49
51
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
15
14.5
14
13.5
13
12.5
3425
3450
3475
3500
3600
10
53
28
IRL
Gps
ηD
3525
3550
3575
ACPR L
ACPR U
12
47
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
3400
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 14 Watts Avg.
24
12
16
20
11
15
46
22
20
18
40
42
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
14.5
14
13.5
13
12.5
3425
3450
3475
3500
3600
16
44
28
IRL
Gps
ηD
3525
3550
3575
ACPR L
ACPR U
12
VDD = 30 Vdc, Pout = 14 W (Avg.)
IDQ = 450 mA, 802.16d, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
38
Figure 5. Two-Tone Power Gain versus
Output Power
9
16
1
IDQ = 675 mA
Pout, OUTPUT POWER (WATTS) PEP
337.5 mA
14
13
11
10
100
G
ps
,POWER
GAIN
(dB)
VDD = 30 Vdc, IDQ = 450 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two Tone Measurements, 10 MHz Tone Spacing
12
15
450 mA
225 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
IDQ = 225 mA
Pout, OUTPUT POWER (WATTS) PEP
337.5 mA
10
20
30
40
50
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
100
10
VDD = 30 Vdc, IDQ = 450 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two Tone Measurements, 10 MHz Tone Spacing
675 mA
450 mA
11.5
10
562.5 mA
VDD = 30 Vdc, Pout = 8 W (Avg.)
IDQ = 450 mA, 802.16d, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S38040HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HSR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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