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參數(shù)資料
| 型號(hào)： | MRF7S38010HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400S-240, CASE 465J-02, 2 PIN |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 520K |
| 代理商： | MRF7S38010HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S38010HR3 MRF7S38010HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
3400
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance
@ Pout = 2 Watts Avg.
20
0
5
10
15
12
17
16.5
16
54
20
19
18
17
49
50
51
52
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
15.5
15
14.5
14
13.5
13
12.5
3425
3450
3475
3500
3600
16
53
25
IRL
Gps
ηD
VDD = 30 Vdc, Pout = 2 W (Avg.), IDQ = 160 mA
802.16d, 64 QAM 3
/4, 4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
3525
3550
3575
ACPR L
ACPR U
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance
@ Pout = 4 Watts Avg.
20
0
5
10
15
12
17
16.5
16
45
26
25
24
23
40
41
42
43
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
15.5
15
14.5
14
13.5
13
12.5
22
44
25
IRL
Gps
ηD
VDD = 30 Vdc, Pout = 4 W (Avg.), IDQ = 160 mA
802.16d, 64 QAM 3
/4, 4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
ACPR L
ACPR U
Figure 5. Two-Tone Power Gain versus
Output Power
10
19
1
IDQ = 240 mA
Pout, OUTPUT POWER (WATTS) PEP
200 mA
14
13
11
10
50
G
ps
,POWER
GAIN
(dB) 16
VDD = 30 Vdc, IDQ = 160 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two Tone Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
IDQ = 80 mA
Pout, OUTPUT POWER (WATTS) PEP
120 mA
10
20
30
40
50
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
50
10
VDD = 30 Vdc, IDQ = 160 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two Tone Measurements, 10 MHz Tone Spacing
12
15
17
18
160 mA
120 mA
80 mA
240 mA
200 mA
160 mA
3400
3425
3450
3475
3500
3600
3525
3550
3575
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S38010HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38040HR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38040HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38040HSR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38040HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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