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參數(shù)資料
| 型號(hào)： | MRF7S35120HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 732K |
| 代理商： | MRF7S35120HSR3 |
MRF7S35120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
Typical Pulsed Performance: VDD =32 Volts,IDQ = 150 mA,
Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 12 dB
Drain Efficiency — 40%
Rise Time — 6 ns
Fall Time — 6 ns
Typical WiMAX Performance: VDD =32 Volts,IDQ = 900 mA,
Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4,4Bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 13 dB
Drain Efficiency — 16%
RCE — --33 dB (EVM — 2.2% rms)
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak
Power
Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 120 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 72°C, 120 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle
ZθJC
0.11
0.12
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
MRF7S35120HSR3
3100--3500 MHz, 120 W PEAK, 32 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465A--06, STYLE 1
NI--780S
Document Number: MRF7S35120HS
Rev. 3, 6/2010
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
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| MRF7S35120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S38010HR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010HSR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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