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參數(shù)資料
| 型號： | MRF7S21080HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 420K |
| 代理商： | MRF7S21080HR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S21080HR3 MRF7S21080HSR3
TYPICAL CHARACTERISTICS
20
8
12
16
4
G
ps
,POWER
GAIN
(dB)
2220
2060
IRL
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 22 Watts Avg.
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 800 mA
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
2160
2120
2100
19
18
2.5
34
33
32
31
30
0.5
1
1.5
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
24
8
12
16
20
η
D
,DRAIN
EFFICIENCY
(%)
2140
2080
2200
2180
18.4
18.2
17.8
17.6
17
2
4
17.2
17.4
18.6
18.8
0
Gps
G
ps
,POWER
GAIN
(dB)
2220
2060
IRL
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 40 Watts Avg.
VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 800 mA
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
2160
2120
2100
18.2
17.4
4
45
44
43
42
2
2.5
3
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
η
D
,DRAIN
EFFICIENCY
(%)
2140
2080
2200
2180
17.8
17.6
17.2
17
16.4
3.5
16.6
16.8
18
41
Gps
Figure 5. Two-Tone Power Gain versus
Output Power
100
13
20
1
IDQ = 1200 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
400 mA
18
17
16
10
200
G
ps
,POWER
GAIN
(dB)
800 mA
15
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
IDQ = 400 mA
Pout, OUTPUT POWER (WATTS) PEP
1200 mA
600 mA
10
20
30
40
100
60
50
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
200
800 mA
600 mA
1000 mA
19
14
1000 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21080HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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