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參數(shù)資料
| 型號： | MRF7S19210HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 505K |
| 代理商： | MRF7S19210HR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S19210HR3 MRF7S19210HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
1880
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 63 Watts Avg.
10
2
4
6
8
20.5
20
19.5
36
34
33
32
31
32
33
34
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
19
18.5
18
17.5
17
16.5
16
1900
1920
1940
1960
1980
2000
2020
2040
30
35
12
P
ARC
(dB)
3.5
1.5
2
2.5
3
4
ACPR
(dBc)
Figure 4. Power Gain versus Output Power
100
16
22
1
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 Vdc
f = 1960 MHz
20
19
18
10
300
G
ps
,POWER
GAIN
(dB)
21
IDQ = 2100 mA
1750 mA
700 mA
1050 mA
1400 mA
Figure 5. Intermodulation Distortion Products
versus Two-Tone Spacing
TWOTONE SPACING (MHz)
10
20
30
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
40
IM3U
IM3L
IM5U
IM5L
IM7L
IM7U
Figure 6. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
50
0
2
4
OUTPUT
COMPRESSION
A
T
0.01%
PROBABILITY
ON
CCDF
(dB)
30
70
80
100
15
45
40
35
30
25
20
η
D,
DRAIN
EFFICIENCY
(%)
1 dB = 48.916 W
2 dB = 68.142 W
3 dB = 90.739 W
90
ηD
ACPR
PARC
ACPR
(dBc)
55
25
30
35
45
40
50
20.5
G
ps
,POWER
GAIN
(dB)
20
19.5
19
18.5
18
17.5
Gps
21
IRL
Gps
ACPR
ηD
60
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
PARC
17
0
40
60
VDD = 28 Vdc, Pout = 63 W (Avg.)
IDQ = 1400 mA
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19210HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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