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參數(shù)資料
10
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
P3dB = 53.97 dBm (249 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW
12
μsec(on), 10% Duty Cycle, f = 1960 MHz
56
54
52
37
39
38
41
40
44
42
Actual
Ideal
P1dB = 53.25 dBm
(211 W)
57
55
51
43
P
out
,OUTPUT
POWER
(dBm)
P6dB = 54.33 dBm (271 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
35
34
33
32
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
2.34 - j9.24
0.79 - j2.94
Figure 17. Pulsed CW Output Power
versus Input Power
36
P3dB = 54.9 dBm (310 W)
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW
12
μsec(on), 10% Duty Cycle, f = 1960 MHz
56
54
52
37
41
40
44
42
Actual
Ideal
P1dB = 54.14 dBm
(259 W)
57
55
43
P
out
,OUTPUT
POWER
(dBm)
P6dB = 55.27 dBm (336 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
62
35
34
33
45
38
39
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
2.34 - j9.24
0.79 - j2.94
Figure 18. Pulsed CW Output Power
versus Input Power
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19170HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19170HS | 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述: |
| MRF7S19170HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19170HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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