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參數(shù)資料
| 型號： | MRF7S19100NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4 |
| 文件頁數(shù)： | 15/18頁 |
| 文件大?。?/td> | 592K |
| 代理商： | MRF7S19100NR1 |
6
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
TYPICAL CHARACTERISTICS
2040
1880
1980
1940
1920
1960
1900
2020
2000
G
ps
,POWER
GAIN
(dB)
2040
1880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 29 Watts Avg.
VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1000 mA
SingleCarrier WCDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
1980
1940
1920
11
19
18
17
16
15
14
13
12
1.7
33
32
31
30
29
1.4
1.5
1.6
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
30
10
15
20
25
η
D
,DRAIN
EFFICIENCY
(%)
1960
G
ps
,POWER
GAIN
(dB)
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 47 Watts Avg.
VDD = 28 Vdc, Pout = 47 W (Avg.), IDQ = 1000 mA
SingleCarrier WCDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
11
19
18
17
16
15
14
13
12
3.3
40
39
38
37
36
3
3.1
3.2
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
30
10
15
20
25
η
D
,DRAIN
EFFICIENCY
(%)
Figure 5. Two-Tone Power Gain versus
Output Power
100
15
20
1
IDQ = 1500 mA
1250 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
500 mA
1000 mA
18
17
16
10
200
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
IDQ = 500 mA
Pout, OUTPUT POWER (WATTS) PEP
1250 mA
1000 mA
750 mA
1500 mA
10
20
30
40
100
60
50
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
PARC
19
750 mA
200
1900
2020
2000
相關(guān)PDF資料 |
PDF描述 |
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| MRF7S19100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF7S19120NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF7S19170HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S19170HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S19210HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19120NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19120NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF7S19170HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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