參數(shù)資料
型號： MRF7S19080HSR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù)： 15/16頁
文件大小： 639K
代理商： MRF7S19080HSR3
8
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
TYPICAL CHARACTERISTICS
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
19
0
16
15
50
100
17
18
32 V
IDQ = 750 mA
f = 1960 MHz
150
VDD = 24 V
28 V
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 24 W Avg., and ηD = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
106
110
130
150
170
190
MTTF
(HOURS)
210
230
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 14. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
PROBABILITY
(%)
WCDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
"5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
Input Signal
60
110
10
(dB)
20
30
40
50
70
80
90
100
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
1.8
3.6
5.4
9
f, FREQUENCY (MHz)
Figure 15. Single-Carrier W-CDMA Spectrum
7.2
ACPR in 3.84 MHz
Integrated BW
ACPR in 3.84 MHz
Integrated BW
相關(guān)PDF資料
PDF描述
MRF7S19100NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF7S19100NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF7S19120NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF7S19170HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S19170HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19080HSR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19100NBR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19100NR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19120NR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*