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參數資料
| 型號： | MRF6VP41KHSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN |
| 文件頁數： | 15/18頁 |
| 文件大?。?/td> | 1292K |
| 代理商： | MRF6VP41KHSR6 |
6
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
TYPICAL CHARACTERISTICS
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
100
10
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
1
100
1
TC =25°C
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
100
TJ = 200°C
TJ = 175°C
TJ = 150°C
Note: Each side of device measured separately.
21
1
0
80
10
18
16
14
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
17
15
13
1000 2000
Gps
20
19
20
100
10
VDD =50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
55
65
34
63
62
61
Pin, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
64
60
44
59
58
57
35
36
37
38
39
40
41
42
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 60.70 dBm (1174.89 W)
Actual
Ideal
P1dB = 60.33 dBm (1078.94 W)
56
43
VDD =50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
17
23
10
20
19
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
18
IDQ = 6000 mA
1000
2000
3600 mA
1500 mA
150 mA
375 mA
750 mA
21
22
DD =50 Vdc
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
Figure 9. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =30 V
12
22
0
16
35 V
20
45 V
200
400
600
800
1000
1200
1400
50 V
40 V
14
18
IDQ = 150 mA, f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
Note: Each side of device measured separately.
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相關代理商/技術參數 |
參數描述 |
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| MRF6VP41KHSR7 | 功能描述:射頻MOSFET電源晶體管 VHV6 450MHZ1000W NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF752 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR |
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