參數(shù)資料
型號(hào)： MRF6VP3450HSR6
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN
文件頁(yè)數(shù)： 16/18頁(yè)
文件大?。?/td> 1077K
代理商： MRF6VP3450HSR6
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
Gps
VDD =50 Vdc,IDQ = 1200 mA, f = 860 MHz
Pulse Width = 50 μsec, Duty Cycle = 2.5%
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
100
10
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
1
100
110
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
100
24
10
0
60
100
22
21.5
20.5
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
21
18
1000
20
52
67
30
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
38
23.5
58
31
32
33 34
35 36 37
P out
,O
UT
PU
T
POWER
(d
Bm)
16
24
0
23
22
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
21
600
700
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
18
25
10
22
24
23
100
1000
VDD =50 Vdc,IDQ = 1200 mA, f = 860 MHz
Pulse Width = 50 μsec, Duty Cycle = 2.5%
57
54
20
200
300
400
500
VDD =40 V
45 V
50 V
ηD
25_C
TC =--30_C
85_C
Gps
19
21
20
VDD =50 Vdc,IDQ = 1200 mA, f = 860 MHz
Pulse Width = 50 μsec, Duty Cycle = 2.5%
TC =25_C
TJ = 150_C
0
70
40
60
50
10
30
20
η
D
,DRA
IN
EF
FI
CIE
NCY
(%
)
20
10
TJ = 175_C
TJ = 200_C
22.5
23
19.5
19
18.5
5
15
25
35
45
55
Actual
Ideal
VDD =50 Vdc,IDQ = 1200 mA, f = 860 MHz
Pulse Width = 12 μsec, Duty Cycle = 1%
P1dB = 57.15 dBm
(519 W)
53
56
55
59
61
64
63
66
65
41
39 40
42
P3dB = 57.85 dBm (610 W)
P2dB = 57.65 dBm
(582 W)
19
18
17
--30_C
25_C
85_C
Note: Each side of device measured separately.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6VP41KH 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6VP41KHR5 功能描述:射頻MOSFET電源晶體管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP41KHR6 功能描述:射頻MOSFET電源晶體管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP41KHR7 功能描述:射頻MOSFET電源晶體管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP41KHR7 制造商:Freescale Semiconductor 功能描述:RF POWER FET N CH 110V 375D-05
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