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參數(shù)資料
| 型號(hào)： | MRF6VP21KHR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大小： | 702K |
| 代理商： | MRF6VP21KHR6 |
MRF6VP21KHR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
100
10
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
Note: Each side of device measured separately.
1
100
1
TC =25°C
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
100
TJ = 200°C
TJ = 175°C
TJ = 150°C
Note: Each side of device measured separately.
26
10
80
100
24
22
20
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
23
21
19
1000
2000
Gps
20
25
VDD =50 Vdc,IDQ = 150 mA, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
55
65
30
63
62
61
Pin, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
64
60
40
59
58
57
31
32
33
34
35
36
37
38
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 61.33 dBm (1358.31 W)
Actual
Ideal
P1dB = 60.37 dBm (1088.93 W)
56
39
VDD =50 Vdc,IDQ = 150 mA, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
18
28
10
26
24
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
20
IDQ = 6000 mA
1000
2000
3600 mA
1500 mA
150 mA
375 mA
750 mA
22
VDD = 50 Vdc, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
Figure 9. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =30 V
12
28
0
16
24
35 V
20
45 V
200
400
600
800
1000
1200
1400 1600
50 V
40 V
IDQ = 150 mA, f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600H | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP2600HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP2600HR6 Series 10 - 250 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP2600HR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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