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參數(shù)資料
| 型號(hào)： | MRF6VP121KHR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 1167K |
| 代理商： | MRF6VP121KHR6 |
6
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
TYPICAL CHARACTERISTICS
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
100
10
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
22
1
0
60
10
18
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
17
16
1000
10000
Gps
20
19
21
100
10
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
21.5
500
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
700
800
900
1000
G
ps
,P
OWER
GAIN
(d
B)
P3dB = 1182 W (60.7 dBm)
Actual
Ideal
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
17
25
10
20
19
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
18
IDQ = 6000 mA
1000
10000
1500 mA
150 mA
375 mA
750 mA
21
22
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =30 V
23
0
16
35 V
20
45 V
200
400
600
800
1000
1200
1400
50 V
40 V
18
Note: Each side of device measured separately.
20
22
600
P1dB = 1065 W (60.3 dBm)
3000 mA
22
17
19
21
IDQ = 150 mA, f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
45
40
65
20
25_C
35
25
55
50
Pin, INPUT POWER (dBm) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P out
,O
UT
PU
T
POWER
(d
Bm)
30
40
60
45
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
16
23
24
VDD =50 Vdc
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
85_C
TC =--30_C
1300
1200
1100
21
20.5
20
19.5
19
18.5
18
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP121KHSR5 | 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHSR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
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