- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF6V4300NBR1 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 PDF資料下載
參數(shù)資料
| 型號： | MRF6V4300NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB, 4 PIN |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 816K |
| 代理商： | MRF6V4300NBR1 |
6
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
TYPICAL CHARACTERISTICS
Figure 10. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,P
OWER
GAIN
(d
B)
VDD =20 V
25 V
400
16
23
0
200
50
18
17
100
150
21
20
22
IDQ = 900 mA
f = 450 MHz
35 V
40 V
19
250
300
350
45 V
40
35
60
15
25_C
TC =--30_C
85_C
25
50
45
40
Pin, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
P out
,O
UT
PU
T
POWER
(d
Bm)
VDD =50 Vdc
IDQ = 900 mA
f = 450 MHz
20
30
55
18
25
10
80
24
22
20
70
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
23
21
19
100
500
25_C
TC =--30_C
85_C
Gps
VDD =50 Vdc
IDQ = 900 mA
f = 450 MHz
25_C
--30_C
30 V
50 V
35
250
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 300 W, and ηD = 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
105
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
106
相關PDF資料 |
PDF描述 |
|---|---|
| MRF6VP121KHR6 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP121KHSR6 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP21KHR6 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP2600HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3091NR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V4300NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V4300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V4300 Series 600 MHz 110 V RF Power N-Channel Mosfet - TO-272-4 |
| MRF6V4300NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V4300NR1_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V4300NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。