參數(shù)資料
型號： MRF6S9125MBR1
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF Power Field Effect Transistors
中文描述： 射頻功率場效應晶體管
文件頁數(shù)： 1/16頁
文件大?。?/td> 480K
代理商： MRF6S9125MBR1
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
N-CDMA Application
Typical Single-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
950 mA, P
out
= 27 Watt Avg., Full Frequency Band (865-895 MHz), IS-95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = -47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA,
P
out
= 60 Watts Avg., Full Frequency Band (865-895 MHz or
921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 700 mA, P
out
=
125 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
@ f = 880 MHz
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200
°
C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
398
2.3
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S9125
Rev. 1, 7/2005
Freescale Semiconductor
Technical Data
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125MR1
MRF6S9125MBR1
880 MHz, 27 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S9125NR1(MR1)
CASE 1484-02, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S9125NBR1(MBR1)
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S9125MR1 功能描述:MOSFET RF N-CH 28V 27W TO-270-4 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9125N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9125NBR1 功能描述:MOSFET RF N-CH 28V 27W TO-272-4 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9125NR1 功能描述:MOSFET RF N-CH 28V 27W TO-270-4 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9125NR1_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
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