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參數(shù)資料
| 型號(hào)： | MRF6S27050HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 466K |
| 代理商： | MRF6S27050HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
TYPICAL CHARACTERISTICS
10
55
5
0.1
VDD = 28 Vdc, Pout = 50 W (PEP), IDQ = 500 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
IM3U
10
15
40
45
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
10
1
100
40
50
10
30
20
60
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
Figure 9. Pulsed CW Output Power versus
Input Power
Pin, INPUT POWER (dBm)
37
54
28
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 12
μsec(on), 1% Duty Cycle
f = 2600 MHz
52
50
48
46
44
29
31
30
33
32
36
34
Actual
Ideal
53
51
47
49
45
35
27
P
out
,OUTPUT
POWER
(dBm)
P6dB = 47.88 dBm (61.38 W)
ACPR
(dBc),
AL
T1
(dBc)
Figure 10. Single-Carrier W-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0
65
Pout, OUTPUT POWER (WATTS) AVG. WCDMA
50
15
25
20
35
15
40
5
50
0.2
10
40
45
10
VDD = 28 Vdc, IDQ = 500 mA, f = 2600 MHz
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Gps
ηD
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dBc)
7th Order
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2598.75 MHz, f2 = 2601.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
5th Order
3rd Order
30
35
20
25
IM3L
IM5U
IM5L
IM7L
IM7U
P3dB = 47.44 dBm (55.46 W)
P1dB = 46.91 dBm (49.06 W)
35
30
45
40
1
25
30
55
60
ACPR
ALT1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S27050HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ WCDMA NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27085HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27085HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27085HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27085HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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