參數(shù)資料
型號： MRF6S20010NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝： ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN
文件頁數(shù)： 24/27頁
文件大?。?/td> 687K
代理商： MRF6S20010NR1
6
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
TYPICAL CHARACTERISTICS — 2110-2170 MHz
2210
16
40
2050
40
5
IRL
Gps
IMD
f, FREQUENCY (MHz)
VDD = 28 Vdc, Pout = 10 W (PEP)
IDQ = 130 mA, 100 kHz Tone Spacing
36
10
32
15
28
24
20
25
20
30
2130
2170
Figure 3. Two-Tone Wideband Performance
@ Pout = 10 Watts (PEP)
Pout, OUTPUT POWER (WATTS) PEP
11
18
1
IDQ = 195 mA
VDD = 28 Vdc, f = 2170 MHz
TwoTone Measurements
100 kHz Tone Spacing
17
14
12
10
30
Figure 4. Two-Tone Power Gain versus
Output Power
30
60
10
0.1
1
10
20
30
40
50
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
10
70
10
0.1
7th Order
VDD = 28 Vdc, IDQ = 130 mA
f1 = 2170 MHz, f2 = 2170.1 MHz
TwoTone Measurements
5th Order
3rd Order
20
30
40
130
Figure 6. Intermodulation Distortion Products
versus Output Power
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
2090
15
65 mA
130 mA
50
35
0.1
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ηD
16
13
97.5 mA
162.5 mA
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
130 mA
97.5 mA
195 mA
10
70
20
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 10 W (PEP)
IDQ = 130 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2170 MHz
5th Order
3rd Order
30
40
50
1
100
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
60
Pout, OUTPUT POWER (WATTS) PEP
60
VDD = 28 Vdc, f = 2170 MHz
TwoTone Measurements
100 kHz Tone Spacing
162.5 mA
IDQ = 65 mA
相關(guān)PDF資料
PDF描述
MRF6S21050LSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21050LR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21060NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S21060NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S20010NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR5 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LS 制造商:Freescale Semiconductor 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*