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參數(shù)資料
| 型號： | MRF6S19100HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 407K |
| 代理商： | MRF6S19100HR3 |
4
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
VDD
VGG
B1
R1
R2
C5
C4
C1
C2
C3
C7
C8 C9
C1
1
C10
C12
C6
CUT
OUT
AREA
MRF6S19100H/HS
Rev 2
-
+
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S19100HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S19100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S19120HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19120HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19100HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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