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參數(shù)資料
| 型號： | MRF6S19060NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 607K |
| 代理商： | MRF6S19060NBR1 |
6
RF Device Data
Freescale Semiconductor
MRF6S19060NR1 MRF6S19060NBR1
TYPICAL CHARACTERISTICS
100
12
19
1
0
70
Pout, OUTPUT POWER (WATTS) CW
10
18
16
14
60
50
40
30
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
17
15
13
VDD = 28 Vdc
IDQ = 610 mA
f = 1960 MHz
ηD
Gps
IM3
(dBc),
ACPR
(dBc)
versus Tone Spacing
10
60
10
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
20
30
40
50
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
70
Pout, OUTPUT POWER (WATTS) AVG.
60
10
30
40
30
40
10
100
50
37
53
P3dB = 49.503 dBm (89.19 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 610 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1960 MHz
49
45
41
39
27
25
31
29
35
Actual
Ideal
51
47
43
23
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
G
ps
,POWER
GAIN
(dB)
VDD = 24 V
100
12
17
0
14
13
20
15
16
IDQ = 610 mA
f = 1960 MHz
50
60
ηD
ACPR
28 V
32 V
33
1
20
40
60
80
VDD = 28 Vdc, IDQ = 610 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2Carrier NCDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
10
20
P1dB = 48.792 dBm (75.72 W)
20
TC = 30_C
85
_C
30
_C
25
_C
25
_C
85
_C
30
_C
25
_C
30
_C
85
_C
25
_C
TC = 30_C
85
_C
25
_C
85
_C
30
_C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19060NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 12W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19060NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19100GNR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 22W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19100HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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