參數(shù)資料
型號(hào): MRF6S18060NR1
廠(chǎng)商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁(yè)數(shù): 16/21頁(yè)
文件大?。?/td> 763K
代理商: MRF6S18060NR1
4
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
Figure 2. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1900 MHz
MRF6S18060N/NB
VGS
VDS
R1
R2
C1
R3
C5
C3
C6
C9
C10
C8
C4
C7
CUT
OUT
AREA
C11
C2
Rev. 0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18060NR1_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18100NR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18100NR1_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray