參數(shù)資料
型號： MRF6P9220HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數(shù)： 9/12頁
文件大小： 458K
代理商： MRF6P9220HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
90
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, IDQ = 1600 mA, f1 = 879.95 MHz
f2 = 880.05 MHz, TwoTone Measurements
3rd Order
20
30
40
50
100
500
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
5th Order
7
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
60
20
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 220 W (PEP)
IDQ = 1600 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
30
40
50
150
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
41
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 880 MHz
61
59
57
49
Actual
Ideal
51
29
P
out
,OUTPUT
POWER
(dBm)
55
53
31
33
35
37
39
P6dB = 54.95 dBm (312.77 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 10. Single-Carrier N-CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
0
55
Pout, OUTPUT POWER (WATTS) AVG.
50
30
10
35
40
50
10
100
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
Gps
ACPR
30
_C
40
1
300
20
45
85
_C
TC = 30_C
25
_C
ηD
80
70
VDD = 28 Vdc, IDQ = 1600 mA
f = 880 MHz, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
P3dB = 54.60 dBm (288.76 W)
P1dB = 54.05 dBm (255.09 W)
25
_C
25
_C
85
_C
相關PDF資料
PDF描述
MRF6S18060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S18060MBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S18060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S18060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S18100NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關代理商/技術參數(shù)
參數(shù)描述
MRF6P9220HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR5 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S18060MBR1 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18060NBR1 功能描述:射頻MOSFET電源晶體管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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