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參數(shù)資料
| 型號(hào)： | MRF6P27160HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 487K |
| 代理商： | MRF6P27160HR6 |
MRF6P27160HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2700
2600
2690
2680
2670
2660
2650
2620
2610
2630 2640
15
11
12
13
14
16
14
10
11
12
13
15
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
2700
2600
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 35 Watts Avg.
2690
2680
2670
2660
2650
2620
2610
16
15.8
65
24
22
40
50
55
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 70 Watts Avg.
15.2
15.1
60
35
31
30
35
45
55
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
17
0.1
IDQ = 2700 mA
2250 mA
Pout, OUTPUT POWER (WATTS) PEP
16
15
14
10
400
30
1
IDQ = 900 mA
Pout, OUTPUT POWER (WATTS) PEP
100
40
50
60
10
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
15.4
15
14.6
14.2
14
VDD = 28 Vdc, Pout = 35 W (Avg.),
IDQ = 1800 mA, NCDMA IS95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.9
14.7
14.5
14.3
14
13
900 mA
20
1800 mA
14.4
14.8
15.2
15.6
60
45
20
15
14.8
14.6
14.4
33
40
50
ηD
ACPR
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
1350 mA
2630 2640
IRL
ALT1
14.2
14.1
10
ALT1
VDD = 28 Vdc, Pout = 70 W (Avg.),
IDQ = 1800 mA, NCDMA IS95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
1
1800 mA
1350 mA
0.1
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
2250 mA
2700 mA
23
21
34
32
30
300
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P3300H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR3 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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