參數(shù)資料
型號(hào): MRF6P21190HR6
廠商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 409K
代理商: MRF6P21190HR6
4
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
-
+
-
+
-
C6
+
R1
C5
C4
C3
C2
R2
B1
B2
C1
C7
R4 B3 B4
C8
C9
C10
C11
R3
C12
C15
C14
C16
C17
C18
C21
C19
C20
C13
C22
C28
C29
C23
C24
C25
C26
C27
C30
CUT
OUT
AREA
MRF6P21190
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相關(guān)PDF資料
PDF描述
MRF6P23190HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6P27160HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6P3300HR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6P9220HR3 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S18060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P21190HR6_06 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P23190HR6 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray