參數資料
型號： MRF6522-70R3
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述： 射頻MOSFET線的射頻功率場效應晶體管N溝道增強型MOSFET的側向
文件頁數： 1/8頁
文件大?。?/td> 510K
代理商： MRF6522-70R3
1
MRF6522-70R3
Motorola, Inc. 2004
The RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for GSM 900 frequency band, the high gain and broadband
performance of this device make it ideal for large-signal, common source
amplifier applications in 26 volt base station equipment.
Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ)
Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
7
Adc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
159
0.9
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.1
°
C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF6522-70/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF652270R3
921 - 960 MHz, 70 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 465D-05, STYLE 1
NI-600
REV 6
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關代理商/技術參數
參數描述
MRF6522--70R3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6522-70R3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6522-70R3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF652-A 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF652S 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
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