參數(shù)資料
型號： MRF5S9150HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁數(shù)： 9/12頁
文件大小： 462K
代理商： MRF5S9150HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF5S9150HR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
100
-90
-1 0
Pout, OUTPUT POWER (WATTS) PEP
-3 0
-4 0
-5 0
-6 0
400
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
-2 0
1
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
-60
0
7th Order
TWO-T ONE SPACING (MHz)
5th Order
3rd Order
-2 0
-3 0
-4 0
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-1 0
0.1
VDD = 28 Vdc, Pout = 150 W (PEP)
IDQ = 1500 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulse CW Output Power versus
Input Power
41
61
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1500 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 880 MHz
59
57
53
45
31
29
33
Actual
Ideal
55
25
P
out
,OUTPUT
POWER
(dBm)
27
P3dB = 53.84 dBm (242.1 W)
P1dB = 52.87 dBm (193.64 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
AL
T1,
CHANNEL
POWER
(dBc)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
0
-80
Pout, OUTPUT POWER (WATTS) AVG.
60
-20
40
-40
30
-50
20
-60
-70
110
10
VDD = 28 Vdc, IDQ = 1500 mA
f = 880 MHz, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ηD
ACPR
ALT1
TC = -30 _C
25
_C
300
85
_C
-7 0
7th Order
5th Order
3rd Order
-8 0
10
-5 0
51
49
47
35
37
39
P6dB = 54.52 dBm (283.14 W)
50
100
-30
25
_C
-30
_C
-30
_C
85
_C
85
_C
25
_C
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