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參數(shù)資料
| 型號： | MRF5S9101NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件頁數(shù)： | 18/20頁 |
| 文件大?。?/td> | 544K |
| 代理商： | MRF5S9101NBR1 |
MRF5S9101NR1 MRF5S9101NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
1000
1
0
70
Gps
TC = 30_C
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
IDQ = 700 mA
f = 940 MHz
25
_C
85
_C
TC = 30_C
25
_C
85
_C
100
10
60
50
40
30
20
10
13
20
19
18
17
16
15
14
980
0
3.5
900
Pout = 50 W Avg.
f, FREQUENCY (MHz)
Figure 8. Error Vector Magnitude versus
Frequency
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
VDD = 28 Vdc
IDQ = 650 mA
40 W Avg.
25 W Avg.
3
2.5
2
1.5
1
0.5
910
920
930
940
950
960
970
ηD
100
0
9
1
0
60
EVM
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Error Vector Magnitude and Drain
Efficiency versus Output Power
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
TC = 85_C
25
_C
30
_C
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
850
640
530
320
210
10
980
83
63
900
SR @ 400 kHz
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL
REGROWTH
@
400
kHz
and
600
kHz
(dBc)
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
68
73
78
910
920
930
940
950
960
970
Pout = 50 W Avg.
SR @ 600 kHz
25 W Avg.
40 W Avg.
25 W Avg.
40 W Avg.
50 W Avg.
90
80
45
0
TC = 85_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
25
_C
30
_C
60
65
70
10
20
30
40
50
60
70
80
50
55
75
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
η
D
,DRAIN
EFFICIENCY
(%)
η
D
,DRAIN
EFFICIENCY
(%)
ηD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S9101NR1 | 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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