參數(shù)資料
型號(hào): MRF5S9100NBR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù): 3/12頁
文件大小: 442K
代理商: MRF5S9100NBR1
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
3
RF Device Data
Freescale Semiconductor
Z1, Z15
Z2
Z3
Z4
Z5
Z6, Z11
Z7
0.200
x 0.080
Microstrip
0.105
x 0.080
Microstrip
0.954
x 0.080
Microstrip
0.115
x 0.220
Microstrip
0.375
x 0.220
Microstrip
0.200
x 0.220
x 0.620
Taper
0.152
x 0.620
Microstrip
Z8
Z9
Z10
Z12
Z13
Z14
PCB
0.163
x 0.620
Microstrip
0.238
x 0.620
Microstrip
0.077
x 0.620
Microstrip
0.381
x 0.220
Microstrip
0.114
x 0.220
Microstrip
1.052
x 0.080
Microstrip
Arlon GX0300, 0.030
,
ε
r
= 2.55
Figure 1. MRF5S9100NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
RF
INPUT
RF
OUTPUT
C1
V
SUPPLY
Z15
V
BIAS
Z6
Z13
C12
C4
Z12
C8
C6
C7
Z8
DUT
Z5
C5
C10
C9
Z14
Z4
Z7
L1
Z1
Z2
C3
C2
Z3
C22
C21
+
+
L2
C18
C19
C20
+
C13
C14
+
+
C17
C16
C15
+
Z10
C11
Z9
B1
Z11
Table 6. MRF5S9100NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part
Description
B1
Ferrite Bead, Surface Mount
C1, C12, C18
18 pF Chip Capacitors
C2
0.6-4.5 pF Variable Capacitor, Gigatrim
C3, C11
0.8-8.0 pF Variable Capacitors, Gigatrim
C4
6.2 pF Chip Capacitor
C5, C6
12 pF Chip Capacitors
C7, C8
11 pF Chip Capacitors
C9, C10
5.1 pF Chip Capacitors
C13
470 F, 63 V Electrolytic Capacitor
C14, C15
22 F, 50 V Tantalum Capacitors
C16, C17, C19
0.56 F, 50 V Chip Capacitors
C20, C21
47 F, 16 V Tantalum Capacitors
C22
100 F, 50 V Electrolytic Capacitor
L1
7.15 nH Inductor
L2
22 nH Inductor
Part Number
Manufacturer
Fair-Rite
ATC
Johanson Dielectrics
Johanson Dielectrics
ATC
ATC
ATC
ATC
Nippon
Kemet
Kemet
Kemet
Multicomp
CoilCraft
CoilCraft
2743019447
100B180JP 500X
27271SL
27291SL
100B6R2JP 500X
100B120JP 500X
100B110JP 500X
100B5R1JP 500X
NACZF471M63V
T491X226K035AS
C1825C564J5GAC
T491D4T6K016AS
515D107M050BB6A
1606-7
B07T-5
相關(guān)PDF資料
PDF描述
MRF5S9100NR1 CAP 0.1UF 100V 10% X7R AXIAL TR-14
MRF5S9101MBR1 RF Power Field Effect Transistors
MRF5S9101MR1 RF Power Field Effect Transistors
MRF5S9101NBR1 RF Power Field Effect Transistors
MRF5S9101NR1 RF Power Field Effect Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S9100NR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9101MBR1 功能描述:MOSFET RF N-CH 26V 100W TO2724 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S9101MR1 功能描述:MOSFET RF N-CH 26V 100W TO2704 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S9101N 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270
MRF5S9101NBR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray