參數(shù)資料
型號(hào)： MRF5S9080NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN
文件頁數(shù)： 12/20頁
文件大?。?/td> 755K
代理商： MRF5S9080NBR1
2
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
2
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q)
3.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.8
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
600
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 80 W CW, f = 960 MHz
Power Gain
Gps
17
18.5
20
dB
Drain Efficiency
ηD
55
60
—
%
Input Return Loss
IRL
—
-15
-9
dB
Pout @ 1 dB Compression Point
P1dB
80
90
—
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 550 mA, Pout = 36 W Avg.,
869-894 MHz, 920-960 MHz GSM EDGE Modulation
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
42
—
%
Error Vector Magnitude
EVM
—
2.5
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-77
—
dBc
1. Part is internally matched on input.
相關(guān)PDF資料
PDF描述
MRF5S9100MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9100NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9100NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S9100NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9100MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S9080NR1 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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MRF5S9100MR1 功能描述:MOSFET RF N-CH 26V 20W TO-270-4 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S9100N 制造商:FREESCALE-SEMI 功能描述:
MRF5S9100NBR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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