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參數(shù)資料
| 型號(hào)： | MRF5S21150R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 2 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 382K |
| 代理商： | MRF5S21150R3 |
AR
C
HIVE
INF
O
RMA
TI
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N
ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S21150R3 MRF5S21150SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
Figure 8. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Figure 9. 2-Carrier W-CDMA Spectrum
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
24
68
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTBF Factor versus Junction Temperature
MTBF
FACT
OR
(HOURS
x
AMPS
)
2
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
108
107
106
120
140
160
180
200
f, FREQUENCY (MHz)
110
120
70
20
80
60
50
(dB)
90
100
40
30
3.84 MHz
Channel BW
IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
20
515
10
0
5
10
15
20
25
0
55
Pout, OUTPUT POWER (WATTS) AVG. (WCDMA)
IM3
(dBc),
ACPR
(dBc)
,DRAIN
(%),
η
G
ps
,POWER
GAIN
(dB
)
30
25
30
20
35
15
40
5
50
1
10
100
η
Gps
ACPR
IM3
45
10
VDD = 28 Vdc, IDQ = 1300 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x WCDMA, 10 MHz
@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
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| MRF5S9070MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S9070NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21150S | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S21150SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S4125NBR1 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S4125NR1 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S4140HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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