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參數資料
| 型號： | MRF5S21150HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數： | 8/12頁 |
| 文件大?。?/td> | 398K |
| 代理商： | MRF5S21150HSR3 |
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 33 Watts Avg.
IM3
(dBc),
ACPR
(dBc)
G
ps
,POWER
GAIN
(dB)
30
10
15
20
25
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1300 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
2200
2180
2160
2140
2120
2100
2080
5
13
12
11
10
9
8
7
6
44
35
30
25
20
28
32
36
40
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
100
10
14
1
IDQ = 1900 mA
1600 mA
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,P
O
WER
G
AIN
(dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
700 mA
1300 mA
1000 mA
13
12
11
10
1000
55
25
1
IDQ = 700 mA
Pout, OUTPUT POWER (WATTS) PEP
1600 mA
1300 mA
1000 mA
1900 mA
10
30
35
40
45
50
100
65
60
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
10
60
25
0.1
7th Order
TWOTONE SPACING (MHz)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
30
35
40
45
50
55
1
100
47
58
P3dB = 53.41 dBm (219.28 W)
Pin, INPUT POWER (dBm)
P
out
,OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1300 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
56
54
52
50
48
37
39
41
Actual
Ideal
P1dB = 52.73 dBm (187.5 W)
43
45
35
η
D
,DRAIN
EFFICIENCY
(%)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF5S21150HSR5 | 功能描述:MOSFET RF N-CHAN 28V 33W NI-880S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21150R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S21150S | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S21150SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S4125NBR1 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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