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參數(shù)資料
| 型號(hào)： | MRF5S21100L |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 204K |
| 代理商： | MRF5S21100L |
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MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
MOTOROLA RF DEVICE DATA
Figure 12. Series Equivalent Input and Output Impedance
f
MHz
Zsource
Zload
2100
2120
2160
1.2 – j2.1
2.2 – j3.0
1.4 – j2.3
3.4 – j7.2
3.4 – j6.5
4.9 – j7.0
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
Zo = 10
Zload*
f = 2100 MHz
f = 2200 MHz
Zsource
f = 2100 MHz
f = 2200 MHz
2200
1.7 – j2.1
3.4 – j8.6
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21100LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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