- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359217 > MRF5S21090HSR3 (飛思卡爾半導(dǎo)體(中國)有限公司) XTAL MTL T/H HC49/U PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF5S21090HSR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | XTAL MTL T/H HC49/U |
| 中文描述： | 將使用的AB類的PCN-PCS/cellularradio和WLL應(yīng)用。 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 379K |
| 代理商： | MRF5S21090HSR3 |
MRF5S21090HR3 MRF5S21090HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
42
45
57
30
55
53
51
49
47
32
34
36
38
40
Figure 3. 2-Carrier W-CDMA Broadband Performance
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
100
12
17
1
1000 mA
P
out
, OUTPUT POWER (WATTS) PEP
Gp
V
DD
= 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
450 mA
850 mA
650 mA
15
14
13
10
16
45
15
1
I
DQ
= 450 mA
P
out
, OUTPUT POWER (WATTS) PEP
850 mA
1200 mA
650 mA
1000 mA
10
20
25
30
35
40
100
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
50
10
60
20
0.1
7th Order
TWOTONE SPACING (MHz)
I
I
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
TwoTone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
30
35
40
45
50
55
1
25
P3dB = 51.17 dBm (130.9 W)
P
in
, INPUT POWER (dBm)
Po
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
Actual
Ideal
P1dB = 50.47 dBm (111.4 W)
η
D
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
I
Gp
30
10
15
20
25
I
I
2200
2180
2160
2140
2120
2100
2080
5
13
12
11
10
9
8
7
6
45
30
25
20
20
25
30
35
40
40
35
15
14
35
V
DD
= 28 Vdc, P
out
= 19 W (Avg.), I
DQ
= 850 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
I
DQ
= 1200 mA
η
D
,
E
I
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5S21100HR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| MRF5S21100LR3 | The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100HSR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| MRF5S21130HSR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21090HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 RF LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21090L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21090LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21100HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。