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參數(shù)資料
| 型號： | MRF5S21045MR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | PLASTIC, CASE 1486-03, 4 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 563K |
| 代理商： | MRF5S21045MR1 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF5S21045MR1 MRF5S21045MBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
20
8
11
14
17
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
22
10
13
16
19
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 10 Watts
2200
2180
2160
2140
2120
2100
2080
13.4
15.2
15
44
32
28
24
20
16
32
36
40
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 20 Watts
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
11
17
1
IDQ = 800 mA
650 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements, 10 MHz Tone Spacing
15
13
12
10
40
10
1
Pout, OUTPUT POWER (WATTS) PEP
10
20
30
100
60
50
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
14.8
14.6
14.4
14.2
14
13.8
13.6
28
VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA
2 Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
2220
2060
2200
2180
2160
2140
2120
2100
2080
13
14.8
34
46
42
38
34
30
22
26
30
14.4
14.2
14
13.8
13.6
13.4
13.2
18
14.6
IRL
Gps
ACPR
IM3
ηD
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA
2 Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
16
14
500 mA
350 mA
200 mA
IDQ = 200 mA
650 mA
800 mA
500 mA
350 mA
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements, 10 MHz Tone Spacing
相關PDF資料 |
PDF描述 |
|---|---|
| MRF5S21045NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S21090LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21045NBR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21045NR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21045NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21090HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21090HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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