參數(shù)資料
型號： MRF5S19150S
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù)： 5/12頁
文件大?。?/td> 457K
代理商： MRF5S19150S
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 Adc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
—
0.24
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3.6 Adc)
gfs
—
9
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
3.1
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps
13
14
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
24
26
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 –2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
IM3
—
–36.5
–35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 –885 MHz and f2 +885 MHz)
ACPR
—
–50
–48
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
–17
–9
dB
(1) Part is internally matched both on input and output.
相關PDF資料
PDF描述
MRF5S21045MBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S21045MR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S21045NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S21045NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S21090LR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
MRF5S19150SR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21045 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21045MBR1 功能描述:MOSFET RF N-CH 28V 10W TO272-4 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S21045MR1 功能描述:MOSFET RF N-CH 28V 10W TO270-4 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S21045NBR1 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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