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參數(shù)資料
| 型號(hào)： | MRF5S19090HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 461K |
| 代理商： | MRF5S19090HSR3 |
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6
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
TYPICAL CHARACTERISTICS
ηD
0
40
1
--65
--25
IM3
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2--Carrier N--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
IM
3
(d
B
c)
,
A
C
P
R
(d
B
c)
VDD = 28 Vdc, IDQ = 850 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N--CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3
ηD
35
--30
30
--35
25
--40
20
--45
15
--50
10
--55
5
--60
10
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTBF in a particular application.
108
107
106
120
140
160
180
200
η
D
,D
R
A
IN
E
F
IC
IE
N
C
Y
(%
),
G
ps
,P
O
W
E
R
G
A
IN
(d
B
)
M
T
F
FA
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(H
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R
S
X
A
M
P
S
2 )
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 10. 2--Carrier CCDF N--CDMA
10
1
0.1
0.01
0.001
2
4
6
8
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±
885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
P
R
O
B
A
B
IL
IT
Y
(%
)
f, FREQUENCY (MHz)
--100
0
Figure 11. 2--Carrier N--CDMA Spectrum
--10
--20
--30
--40
--50
--60
--70
--80
--90
--ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
--IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
--1.5
--3
--4.5
--6
--7.5
7.5
(d
B
)
N--CDMA TEST SIGNAL
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| MRF5S19090LSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19090HSR5 | 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19090LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19100HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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