參數(shù)資料
型號(hào): MRF5S19060NBR1
廠(chǎng)商: MOTOROLA INC
元件分類(lèi): 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: PLASTIC, CASE 1484-02, 4 PIN
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 401K
代理商: MRF5S19060NBR1
MRF5S19060NR1 MRF5S19060NBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two Tone Measurements,
2.5 MHz Tone Spacing
1150 mA
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
2020
1900
IRL
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
20
5
10
15
VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA
2 Carrier NCDMA, 2.5 MHz Carrier Spacing
,
1.2288 MHz Channel Bandwidth, Peak/Avg. = 9.8 dB
@ 0.01% Probability (CCDF)
2000
1940
1920
14.8
53
24
23
22
35
41
47
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
1980
1960
14.6
14.4
14.2
14
13.8
13.6
Gps
IM3
1.2288 MHz Channel Bandwidth, Peak/Avg. = 9.8 dB
@ 0.01% Probability (CCDF)
η
D
,DRAIN
EFFICIENCY
(%)
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance
14.2
43
39
37
35
25
31
37
2020
1900
1980
1920
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
20
5
10
15
G
ps
,POWER
GAIN
(dB)
2000
14
13.8
13.6
13.4
13.2
13
1940
1960
VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA
2 Carrier NCDMA, 2.5 MHz Carrier Spacing,
Figure 5. Two-Tone Power Gain versus
Output Power
100
12
17
1
IDQ = 1150 mA
350 mA
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two Tone Measurements, 2.5 MHz Tone Spacing
16
15
14
10
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
13
550 mA
750 mA
950 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
45
15
1
IDQ = 350 mA
10
20
25
30
35
40
100
60
50
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
55
950 mA
750 mA
550 mA
相關(guān)PDF資料
PDF描述
MRF5S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S19090HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19090LSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19090LR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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