參數(shù)資料
型號(hào): MRF5P21240HR6
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件頁數(shù): 9/12頁
文件大?。?/td> 577K
代理商: MRF5P21240HR6
6
RF Device Data
Freescale Semiconductor
MRF5P21240HR6
TYPICAL CHARACTERISTICS
100
0
30
1
55
25
Gps
ACPR
IM3
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
VDD = 28 Vdc, IDQ = 2200 mA
f1 = 2135 MHz, f2 = 2145 MHz
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
(dBc),
ACPR
(dBc)
25
30
20
35
15
40
10
45
5
50
10
ηD
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
220
100
120
140
160
180
200
106
109
108
107
MTTF
FACT
OR
(HOURS
x
AMPS
2 )
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
24
68
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
110
120
70
20
80
60
50
(dB)
90
100
40
30
3.84 MHz
Channel BW
IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
20
515
10
0
5
10
15
20
25
W-CDMA TEST SIGNAL
WCDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
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