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參數(shù)資料
| 型號： | MRF5P21045NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, 4 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 417K |
| 代理商： | MRF5P21045NR1 |
MRF5P21045NR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
20
8
11
14
17
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
22
10
13
16
19
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 5. 2-Carrier W-CDMA Broadband Performance
@ Pout = 10 Watts Avg.
2200
2180
2160
2140
2120
2100
2080
13.4
15.2
15
44
32
28
24
20
16
32
36
40
f, FREQUENCY (MHz)
Figure 6. 2-Carrier W-CDMA Broadband Performance
@ Pout = 20 Watts Avg.
Figure 7. Two-Tone Power Gain versus
Output Power
Figure 8. Third Order Intermodulation Distortion
versus Output Power
100
11
17
1
IDQ = 800 mA
650 mA
Pout, OUTPUT POWER (WATTS) PEP
15
13
12
10
40
10
1
Pout, OUTPUT POWER (WATTS) PEP
10
20
30
100
60
50
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
14.8
14.6
14.4
14.2
14
13.8
13.6
28
2220
2060
2200
2180
2160
2140
2120
2100
2080
13
14.8
34
46
42
38
34
30
22
26
30
14.4
14.2
14
13.8
13.6
13.4
13.2
18
14.6
IRL
Gps
ACPR
IM3
ηD
16
14
IDQ = 200 mA
650 mA
800 mA
500 mA
350 mA
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements
7
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 500 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @
0.01% Probability (CCDF)
5
VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 500 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @
0.01% Probability (CCDF)
300
500 mA
350 mA
200 mA
70
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements
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| MRF5P21180HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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