參數(shù)資料
型號: MRF5943R1G
元件分類: 小信號晶體管
英文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC, M240, SO-8
文件頁數(shù): 2/5頁
文件大?。?/td> 124K
代理商: MRF5943R1G
MRF5943, R1, R2
MRF5943G, R1, R2
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25
°C)
STATIC
(off)
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
30
-
Vdc
BVCBO
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
40
-
Vdc
BVEBO
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
3.5
-
Vdc
ICBO
Collector Cutoff Current
(VCB = 20 Vdc, VBE = 0 Vdc)
-
.01
mA
ICEO
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0 Vdc)
-
.05
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 15 Vdc)
25
-
300
VCE(sat)
Collector-emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mA)
.2
Vdc
VBE(sat)
Collector-emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mA)
1.0
Vdc
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Ftau
Current-Gain Bandwidth Product
(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)
-
1.3
-
GHz
相關PDF資料
PDF描述
MRF5943 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF5943R2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF5P20180R6 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21180HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21180HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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