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參數(shù)資料
| 型號： | MRF559G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, M238, MACRO-X-4 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 134K |
| 代理商： | MRF559G |
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MRF559
MRF559G
Rev A 9/2005
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
GPE
Power Gain
Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc
f = 870
MHz
f = 512
MHz
8.0
-
9.5
13
-
dB
η
Collector Efficiency
Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc
f = 870
MHz
f = 512
MHz
50
-
65
60
-
%
Typical Performance @ VCC = 7.5V
GPE
Power Gain
Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc
f = 870 MHz
f = 512
MHz
-
6.5
10
-
dB
η
Collector Efficiency
Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc
f = 870 MHz
f = 512
MHz
-
70
65
-
%
Figure 2. 870 MHz Test Fixture
C1, C2, C4, C5 — 1.0–10 pF Johanson
C3, C6 — 0.001
F Chip Capacitor
C7 — 1.0
F Tantalum
L1, L4 — 4 Turns #26 AWG, 0.3 cm ID, 0.4 cm Long
L2, L3 — Ferrite Bead
Z1 — 50
1.5 cm
Z2 — 30
2.5 cm
Z3 — 50
2.0 cm
Z4 — 50
1.2 cm
Z5, Z6 — 50
1.25 cm
Microstrip Elements —
ε r = 2.55
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF559GT | 制造商:Microsemi Corporation 功能描述:MRF559GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF559LF | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF559T | 制造商:Microsemi Corporation 功能描述:MRF559T - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF571 | 制造商:Advanced Semiconductor Inc 功能描述:L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5711LT1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143 |
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