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參數(shù)資料
| 型號： | MRF559 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 122K |
| 代理商： | MRF559 |
1
MRF559
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for UHF linear and large–signal amplifier applications.
Specified 12.5 Volt, 870 MHz Characteristics —
Output Power = 0.5 Watts
Minimum Gain = 8.0 dB
Efficiency 50%
S Parameter Data From 250 MHz to 1.5 GHz
1.0 dB Compression > +20 dBm Typ
Ideally Suited for Broadband, Class A, Low–Noise Applications
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
16
Vdc
Collector–Base Voltage
VCBO
36
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
150
mAdc
Total Device Dissipation @ TC = 50°C
Derate above 50
°C
PD
2.0
20
Watts
mW/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
36
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
3.0
—
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
ICES
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
90
200
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f = 200 MHz)
fT
—
3000
—
MHz
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
2.0
2.5
pF
(continued)
Order this document
by MRF559/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF559
0.5 W, 870 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 317–01, STYLE 2
Motorola, Inc. 1994
REV 6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF559G | 功能描述:TRANS NPN 16V 150MA MACRO X RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MRF559GT | 制造商:Microsemi Corporation 功能描述:MRF559GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF559LF | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF559T | 制造商:Microsemi Corporation 功能描述:MRF559T - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF571 | 制造商:Advanced Semiconductor Inc 功能描述:L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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