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參數(shù)資料
| 型號： | MRF5176 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 94K |
| 代理商： | MRF5176 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 50 mA
60
V
BVCEO
IC = 50 mA
33
V
BVEBO
IE = 5.0 mA
4.0
V
ICBO
VCB = 30 V
1.0
mA
hFE
VCE = 5.0 V
IC = 500 mA
10
100
---
COB
VCB = 30 V
f = 1.0 MHz
25
pF
PG
η
D
VCC = 28 V
POUT = 15 W
f = 400 MHz
10
50
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF5176
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
The
ASI MRF5176 is Designed for
Class C Amplifiers in 225 to 400 MHz
Military Communication Equipment.
FEATURES:
P
G = 10 dB Typical at 400 MHz
Economical .280” Stud Package
Omnigold Metalization System
MAXIMUM RATINGS
IC
2.0 A
VCBO
60 V
VCEO
33 V
VEBO
4.0 V
PDISS
30 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
6.0
°C/W
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
C
B
E
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| MRF531 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-39 |
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