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參數(shù)資料
| 型號： | MRF455 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 18 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 92K |
| 代理商： | MRF455 |
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Gpe
13
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
η
55
—
%
Series Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zin
—
1.66–j.844
—
Ohms
Series Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zout
—
1.73–j.188
—
Ohms
Parallel Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zin
—
2.09/1030
—
/pF
Parallel Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zout
—
1.75/330
—
/pF
Figure 1. 30 MHz Test Circuit Schematic
f = 30 MHz
P
,OUTPUT
POWER
(W
ATTS)
out
80
Pin, INPUT POWER (WATTS)
0
70
60
50
40
0
1
234
5
30
20
10
P
,OUTPUT
POWER
(W
ATTS)
out
VCC, SUPPLY VOLTAGE (VOLTS)
0.5
1.5
2.5
3.5
4.5
VCC = 13.6 V
80
70
60
50
40
30
20
10
f = 30 MHz
12.5 V
Pin = 3.5 V
1 W
1.75 W
8
10
121416
18
911
13
15
17
L3
R1
C5
C6
C7
C8
RF OUTPUT
L4
C4
C1
C2
L2
DUT
C3
L1
-
+
12.5 Vdc
L5
RF INPUT
C1, C2, C4 — ARCO 469
C3 — ARCO 466
C5 — 1000 pF, UNELCO
C6, C7 — 0.1
F Disc Ceramic
C8 — 1000
F/15 V Electrolytic
R1 — 10 Ohm/1.0 Watt, Carbon
L1 — 3 Turns, #18 AWG, 5/16
″ I.D., 5/16″ Long
L2 — VK200–20/4B, FERROXCUBE
L3 — 12 Turns, #18 AWG Enameled Wire, 1/4
″ I.D., Close Wound
L4 — 3 Turns 1/8
″ O.D. Copper Tubing, 3/8″ I.D., 3/4″ Long
L5 — 7 FERRITE Beads, FERROXCUBE #56–590–65/3B
90
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
2
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| MRF455MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF460 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF464 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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| MRF475 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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