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參數(shù)資料
| 型號： | MRF392 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-8 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 14K |
| 代理商： | MRF392 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
30
V
BVCES
IC = 50 mA
60
V
BVEBO
IE = 5.0 Ma
4.0
V
ICBO
VCB = 30 V
5.0
mA
Cob
VCB = 28 V
f = 1.0 MHz
52
pF
hFE
VCE = 5.0 V
IC = 1.0 A
20
100
---
Gpe
ηηηηc
VCE = 28 V
Pout = 125 W
f = 400 MHz
8.0
50
8.5
55
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF392
DESCRIPTION:
The
ASI MRF392 is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
300 - 500 MHz Military
Communications Band.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
IC
16 A
VCB
60 V
PDISS
270 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-55 °C to +200 °C
θθθθ
JC
.65 °C/W
PACKAGE STYLE .400 8L FLG
MIN IMU M
inche s / m m
.115 / 2.92
.065 / 1.65
.380 / 9.65
B
C
D
E
F
G
A
MA X IMU M
.125 / 3.18
.390 / 9.91
.075 / 1.91
inche s / m m
H
.645 / 16 .3 8
.655 / 16 .6 4
DIM
K
L
I
J
.895 / 22 .7 3
.420 / 10 .6 7
.120 / 3.05
.905 / 22 .9 9
.430 / 10 .9 2
.130 / 3.30
O
N
M
.395 / 10 .0 3
.159 / 4.04
.405 / 10 .2 9
.175 / 4.45
.003 / 0.08
.007 / 0.18
.280 / 7.11
.130 / 3.30
D
K
E
.125
F
G
.19 25
J
I
H
N
L M
4 x .0 60 R
FU LL R
A
B
C
O
.360 / 9.14
.030 / 0.76
.735 / 18 .6 7
.765 / 19 .4 3
1
2
3
1 = COLLECTOR
2 = EMITTER
3 = BASE
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