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參數(shù)資料
| 型號： | MRF373AS |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-05, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MRF373AS |
5.2–37
MRF373A MRF373AS
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID =1 A)
V(BR)DSS
70
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200 A)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.41
0.45
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Coss
—
49
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Crss
—
2
—
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
η
56
60
—
%
Load Mismatch
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 10:1 at All Phase Angles)
ψ
No Degradation in Output Power
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF373ASR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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| MRF373S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF373SR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF374 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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