參數(shù)資料
型號(hào)： MRF21120R6
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-1230, CASE 375D-04, 4 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 348K
代理商： MRF21120R6
MRF21120R6
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 Adc)
V(BR)DSS
65
—
Vdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc )
IGSS
—
1
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
ON CHARACTERISTICS (1)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.8
—
S
Gate Threshold Voltage
(VDS = 10 V, ID = 200 A)
VGS(th)
2.5
3
3.8
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 500 mA)
VGS(Q)
3
3.9
5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, ID = 2 A)
VDS(on)
—
0.38
0.5
Vdc
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.8
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
10.5
11.4
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
30
34.5
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
-31
-28
dB
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
-12
-9
dB
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
11.5
—
dB
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Gps
—
11.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
η
—
34.5
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IMD
—
-31
—
dB
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IRL
—
-12
—
dB
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, CW, IDQ = 2
500 mA, f1 = 2170.0 MHz)
P1dB
—
120
—
Watts
(1) Each side of device measured separately.
(2) Device measured in push-pull configuration.
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