參數(shù)資料
型號(hào): MRF19045S
廠商: MOTOROLA INC
元件分類(lèi): 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 465F-03, 3 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 147K
代理商: MRF19045S
MRF19045 MRF19045R3 MRF19045S MRF19045SR3
5.2–246
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
TYPICAL CHARACTERISTICS
5
10
15
20
25
30
35
1900
1930
1960
1990
2020
-60
-50
-40
-30
-20
-10
0
Figure 3. 2-Carrier N–CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
13.5
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
G
ps
,POWER
GAIN
(dB)
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
OR
TION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
IM3
(dBc),
ACPR
(dBc)
0
5
10
15
20
25
30
35
40
12345
6789
10
11
12
-70
-65
-60
-55
-50
-45
-40
-35
-30
η
Gps
ACPR
IM3
η
Gps
ACPR
IM3
IRL
f, FREQUENCY (MHz)
IM3
(dBc),
ACPR
(dBc),
IRL
(dB)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
-55
-50
-45
-40
-35
-30
01
9
10 11 12
350 mA
450 mA
700 mA
550 mA
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
23
4
5
6
7
8
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
01
9
10 11 12
23
4
5
6
7
8
-70
-55
-65
-60
-50
-45
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
350 mA
450 mA
700 mA
550 mA
01
9
10 11 12
23
4
5
6
7
8
350 mA
450 mA
700 mA
550 mA
14.0
14.5
15.0
15.5
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
1.2288 MHz Source Channel Bandwidth
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
VDD = 26 Vdc, IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
0
10
20
30
40
50
60
70
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
11
12
13
14
15
16
17
Gps
η
Pout
P1dB
P3dB
Pin, INPUT POWER (WATTS CW)
,DRAIN
EFFICIENCY
(%),
η
P
,OUTPUT
POWER
(W
ATTS
CW)
out
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
IDQ = 550 mA
f = 1960 MHz
相關(guān)PDF資料
PDF描述
MRF19060LSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF19060LR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF19060R3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF19060SR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF19090R3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF19045SR3 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF19060 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF19060LR3 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF19060LSR3 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF19060R3 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS