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參數(shù)資料
| 型號(hào)： | MRF19030LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400, CASE 465E-04, 2 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 415K |
| 代理商： | MRF19030LR3 |
AR
C
HIVE
INF
O
RMA
TI
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ARCHIVE
INFORMA
TION
MRF19030LR3 MRF19030LSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
ADJACENT
CHANNEL
POWER
RA
TION
(dB)
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
0
1940
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
45
20
1920
2000
35
4
1900
35
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
55
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
13
15
VDD = 26 Vdc
IDQ = 300 mA, Pout = 30 W (PEP)
TwoTone Measurement, 100 kHz Tone Spacing
50
45
35
15
30
10
20
10
12
1960
1980
810
100
10
1.0
11
2020
100
30
40
10
25
20
η
IRL
IMD
10
30
40
3rd Order
5th Order
25
50
40
30
80
20
50
70
60
40
30
14
IRL,
INPUT
RETURN
LOSS
(dB)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
34
24
13
14
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
28
20
12.5
12
13.5
15
25
100
30
50
80
90
20
40
70
60
12
885 kHz
2.25 MHz
1.25 MHz
VDD = 26 Vdc
IDQ = 350 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:813, SYNC:32
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
10
200 mA
300 mA
400 mA
VDD = 26 Vdc, f = 1960 MHz
TwoTone Measurement,
100 kHz Tone Spacing
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz
TwoTone Measurement,
100 kHz Tone Spacing
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc, f = 1960 MHz
TwoTone Measurement, 100 kHz Tone Spacing
G
ps
,POWER
GAIN
(dB)
38
24
28
34
36
22
26
32
30
26
30
f = 1960 MHz
IDQ = 300 mA, Pout = 30 W (PEP)
TwoTone Measurement, 100 kHz Tone Spacing
Gps
η
Gps
IMD
02
6
350 mA
300 mA
200 mA
300 mA
400 mA
350 mA
300 mA
22
32
7th Order
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19030LR5 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19030LSR3 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19030LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19030R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19030SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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